APTGT50TDU170P APTGT50TDU170P ? rev 0, september, 2004 apt website ? http:/ / www.advancedpower.com 1 - 5 absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1700 v t c = 25c 70 i c continuous collector current t c = 80c 50 i cm pulsed collector current t c = 25c 100 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 310 w rbsoa reverse bias save operating area t j = 125c 100a @ 1600v these devices are sensitive to electrostatic discharge. proper handing procedures should be followed e5/ e6 g5 e5 e3/ e 4 c5 g3 c6 e6 g6 c2 e2 g2 c4 e4 g4 e1 c1 g1 e1/e2 c3 e3 e5 g5 c 5 c 3 g3 e5 /e 6 e3 e6 g6 c 4 c 6 e4 g4 e1 e1/e2 e3 /e4 c 1 g1 g2 e2 c 2 v ces = 1700v i c = 50a @ tc = 80c applicatio n ? ac switches ? switched mode power supplies ? uninterruptible power supplies features ? trench + field stop igbt ? technology - low voltage drop - low tail current - switching freque nc y up to 20 khz - soft recovery parallel diodes - low diode vf - low leakage current - avalanche energy rated - rbsoa and scsoa rated ? kelvin emitter for easy drive ? very low stray inductance - symmetrical design - lead frames for power connections ? high level of integration ? kelvin emitter for easy drive benefits ? stable temperature behavior ? very rugged ? solderable terminals for easy pcb mounting ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive tc of vcesat ? very low (12mm) profile ? each leg can be easily paralleled to achieve a dual common source configuration of three times the current capability triple dual common source trench igbt ? power module
APTGT50TDU170P APTGT50TDU170P ? rev 0, september, 2004 apt website ? http:/ / www.advancedpower.com 2 - 5 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit bv ces collector - emitter breakdown voltage v ge = 0v, i c = 2.5ma 1700 v i ces zero gate voltage collector current v ge = 0v, v ce = 1700v 5 ma t j = 25c 2.0 2.4 v ce(on) collector emitter on voltage v ge =15v i c = 50a t j = 125c 2.4 v v ge(th) gate threshold voltage v ge = v ce , i c = 2.5 ma 5.0 6.5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 600 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 4400 c rss reverse transfer capacitance v ge = 0v ;v ce = 25v f = 1mhz 150 pf t d(on) turn-on delay time 200 t r rise time 90 t d(off) turn-off delay time 720 t f fall time inductive switching (25c) v ge = 15v v bus = 900v i c = 50a r g = 22 ? 90 ns t d(on) turn-on delay time 220 t r rise time 90 t d(off) turn-off delay time 820 t f fall time 110 ns e on tur n-o n switchi ng energy x 29 e off turn-off switching energy y inductive switching (125c) v ge = 15v v bus = 900v i c = 50a r g = 22 ? diode 22 mj x e on includes diode reverse recovery y in accordance with jedec standard jesd24-1 reverse diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1700 v t j = 25c 250 i rm maximum reverse leakage current v r =1700v t j = 125c 500 a t j = 25c 1.8 2.2 v f diode forward voltage i f = 50a v ge = 0v t j = 125c 1.9 v t j = 25c 19 q rr reverse recovery charge i f = 50a v r = 900v di/dt =990a/s t j = 125c 30 c
APTGT50TDU170P APTGT50TDU170P ? rev 0, september, 2004 apt website ? http:/ / www.advancedpower.com 3 - 5 thermal and package characteristics symbol characteristic min typ max unit igbt 0.4 r thjc junction to case diode 0.7 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 3500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m6 3 5 n.m wt package weight 250 g package outline 5 places (3:1)
APTGT50TDU170P APTGT50TDU170P ? rev 0, september, 2004 apt website ? http:/ / www.advancedpower.com 4 - 5 typical performance curve output characteristics (v ge =15v) t j =25c t j =125c 0 25 50 75 100 125 0 0.5 1 1.5 2 2.5 3 3.5 4 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =17v v ge =9v 0 25 50 75 100 012345 v ce (v) i c (a) t j = 125c transfert characteristics t j =25c t j =125c 0 25 50 75 100 125 567891011 v ge (v) i c (a) energy losses vs collector current eon eoff 0 20 40 60 80 100 0 25 50 75 100 125 i c (a) e (mj) v ce = 900v v ge = 15v r g = 22 ? t j = 125c eon eoff 0 25 50 75 100 125 0 20406080 gate resistance (ohms) e (mj) v ce = 900v v ge =15v i c = 50a t j = 125c switching energy losses vs gate resistance reverse safe operating area 0 20 40 60 80 100 120 0 400 800 1200 1600 v ce (v) i c (a) v ge =15v t j =125c r g =22 ? maximum effective transient thermal impedance, junction to pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) igbt
APTGT50TDU170P APTGT50TDU170P ? rev 0, september, 2004 apt website ? http:/ / www.advancedpower.com 5 - 5 forward characteristic of diode t j =25c t j =125c 0 25 50 75 100 00.511.522.53 v f (v) i c (a) hard switching zcs zvs 0 10 20 30 40 50 0 20406080 i c (a) fmax, operating frequency (khz) v ce =900v d=50% r g =22 ? t j =125c t c =75c operating frequency vs collector current maximum effective transient thermal impedance, junction to pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) diode apt re s e rves the rig ht to c ha nge , witho ut notice , the s pe cificatio ns and info rma tio n co nta ine d he re in apt's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
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